Semiconductor device and manufacturing method

A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wher...

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Bibliographic Details
Main Authors Sonsky Jan, Donkers Johannes Josephus Theodorus Marinus, Heil Stephan Bastiaan Simon
Format Patent
LanguageEnglish
Published 13.03.2018
Subjects
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