Semiconductor device and manufacturing method
A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wher...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
13.03.2018
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Subjects | |
Online Access | Get full text |
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