Semiconductor device and manufacturing method

A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wher...

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Bibliographic Details
Main Authors Sonsky Jan, Donkers Johannes Josephus Theodorus Marinus, Heil Stephan Bastiaan Simon
Format Patent
LanguageEnglish
Published 13.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.
Bibliography:Application Number: US201514704692