Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same

• Main Authors: Zhang Tong, Kai James, Liu Jin, Alsmeier Johann, Zhang Yanli
• Format: Patent
• Language: English
• Published: 13.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures. A source conductive line structure is provided between the substrate and the alternating stack. The source conductive line structure includes a plurality of parallel conductive rail structures extending along a same horizontal direction and adjoined to a common conductive straddling structure. Each memory stack structure straddles a vertical interface between a conductive rail structure and a support matrix. A semiconductor channel in each memory stack structure contacts a respective conductive rail structure and the support matrix.