Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same

A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures. A source conductive line structure is provided between the substrate and the alternating stack. The source conductive...

Full description

Saved in:
Bibliographic Details
Main Authors Zhang Tong, Kai James, Liu Jin, Alsmeier Johann, Zhang Yanli
Format Patent
LanguageEnglish
Published 13.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a substrate, an array of memory stack structures. A source conductive line structure is provided between the substrate and the alternating stack. The source conductive line structure includes a plurality of parallel conductive rail structures extending along a same horizontal direction and adjoined to a common conductive straddling structure. Each memory stack structure straddles a vertical interface between a conductive rail structure and a support matrix. A semiconductor channel in each memory stack structure contacts a respective conductive rail structure and the support matrix.
Bibliography:Application Number: US201615354116