Fast response fluid control system

A plasma processing apparatus and method to control a temperature of a chamber component therein are described. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid c...

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Bibliographic Details
Main Author Buchberger, Jr. Douglas A
Format Patent
LanguageEnglish
Published 13.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GLASS
JOINING GLASS TO GLASS OR OTHER MATERIALS
METALLURGY
MINERAL OR SLAG WOOL
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
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Summary:A plasma processing apparatus and method to control a temperature of a chamber component therein are described. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm. The plasma processing apparatus further includes an AC heated electrostatic chuck (ESC) assembly.
Bibliography:Application Number: US201414198309