Interconnect structures with fully aligned vias

• Main Authors: Huang Elbert E, Nitta Satyanarayana V, Edelstein Daniel C, Fuller Nicholas C, Rath David L
• Format: Patent
• Language: English
• Published: 06.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A structure having fully aligned via connecting metal lines on different Mx levels. The structure may include a first metal line and a second metal line in a first ILD, a cap covering the first ILD, the second metal line and a portion of the first metal line, a second ILD on the cap, and a via that electrically connects the first metal line to a third metal line, wherein the third metal line is above the first metal line and runs perpendicular to the first metal line, the via is fully aligned to the first metal line and the third metal line, and the via electrically connects the first metal line to the third metal line.