Fin field effect transistor (FinFET) device structure with different gate profile and method for forming the same
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first g...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
20.02.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width. |
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Bibliography: | Application Number: US201615169980 |