Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device

• Main Authors: Bouche Guillaume, Wei Andy C
• Format: Patent
• Language: English
• Published: 20.02.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a le...