Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device

A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a le...

Full description

Saved in:
Bibliographic Details
Main Authors Bouche Guillaume, Wei Andy C
Format Patent
LanguageEnglish
Published 20.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a level below the upper surface of the fin spacer. A first epitaxial material is formed on the recessed fin. A lateral extension of the first epitaxial material is constrained by the fin spacer. A cap layer is formed on the first epitaxial material. The fin spacer is removed. The cap layer protects the first epitaxial material during the removal of the fin spacer.
Bibliography:Application Number: US201514644269