Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device

A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a le...

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Main Authors Bouche Guillaume, Wei Andy C
Format Patent
LanguageEnglish
Published 20.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a level below the upper surface of the fin spacer. A first epitaxial material is formed on the recessed fin. A lateral extension of the first epitaxial material is constrained by the fin spacer. A cap layer is formed on the first epitaxial material. The fin spacer is removed. The cap layer protects the first epitaxial material during the removal of the fin spacer.
AbstractList A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin spacer has an upper surface. The at least one fin is recessed to thereby define a recessed fin with a recessed upper surface that it is at a level below the upper surface of the fin spacer. A first epitaxial material is formed on the recessed fin. A lateral extension of the first epitaxial material is constrained by the fin spacer. A cap layer is formed on the first epitaxial material. The fin spacer is removed. The cap layer protects the first epitaxial material during the removal of the fin spacer.
Author Bouche Guillaume
Wei Andy C
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Snippet A method includes forming at least one fin in a semiconductor substrate. A fin spacer is formed on at least a first portion of the at least one fin. The fin...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device
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