Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

• Main Authors: Stamper Anthony K, Fitzsimmons John A, Farooq Mukta G
• Format: Patent
• Language: English
• Published: 13.02.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: providing a substrate having a front side and a back side, the substrate including: a deep trench (DT) capacitor within the substrate extending toward the back side of substrate, and a through silicon via (TSV) adjacent to the DT capacitor within the substrate extending toward the back side of the substrate, the TSV including a metal substantially surrounded by a liner layer and an insulating layer substantially surrounding the liner layer; etching the back side of the substrate to expose the TSV on the back side of the substrate; and forming a first dielectric layer covering the exposed TSV on the back side of the substrate and extending away from the front side of the substrate.