Backside-illuminated photodetector structure and method of making the same

A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a...

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Bibliographic Details
Main Authors Kuo Ying-Hao, Lee Wan-Yu
Format Patent
LanguageEnglish
Published 23.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.
Bibliography:Application Number: US201314087011