Bandgap reference circuit

• Main Authors: Wang Chien-Jung, Jou Chewn-Pu
• Format: Patent
• Language: English
• Published: 23.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit comprises a first doped region and a second doped region in a substrate. The second doped region is separated from the first doped region by a first spacing. The integrated circuit further comprises a dielectric layer over the substrate and a gate over the dielectric layer. The gate is positioned having the first doped region on a first substrate side of the gate and the second doped region on a second substrate side of the gate opposite the first substrate side of the gate. The integrated circuit also comprises a third doped region in the substrate separated from the first doped region by a second spacing. The integrated circuit further comprises a fourth doped region in the substrate. The gate and the third doped region are coupled with a first voltage supply, and the fourth doped region is coupled with a second voltage supply.