Methods of forming hardmask material film

• Main Authors: Kim Min-soo, Lee Won-ki, Yi Song-se, Baek Jae-yeol, Song Hyun-ji, Yu Nae-ry, Kim Myeong-koo, Kim Hyun-woo
• Format: Patent
• Language: English
• Published: 23.01.2018
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

Methods of forming a hardmask material film are provided. The methods may include preparing a substrate including a first region that includes first patterns with a first density and a second region that includes second patterns with a second density that is lower than the first density or is free of patterns, forming a first hardmask material film in gaps between the first patterns and on surfaces of the first region and the second region, performing a heat treatment on the first hardmask material film such that solvent solubility of portions of the first hardmask material film in the gaps between the first patterns becomes different from solvent solubility of portions of the first hardmask material film outside the gaps, removing the first hardmask material film formed on the surfaces of the first region and the second region such that the portions of the first hardmask material film in the gaps at least partially remain in the gaps, and forming a second hardmask material film on the surfaces of the first region and the second region.