Capacitance monitoring using X-ray diffraction

A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of...

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Bibliographic Details
Main Authors Kang Donghun, Kwon Oh-jung, Murray Conal E, Kohli Kriteshwar K, Madan Anita
Format Patent
LanguageEnglish
Published 16.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.
Bibliography:Application Number: US201414575134