One-time-programming (OTP) memory cell with floating gate shielding

A one-time programmable (OTP) memory cell with floating gate shielding is provided. A pair of transistors is arranged on a semiconductor substrate and electrically coupled in series, where the transistors comprise a floating gate. An interconnect structure overlies the pair of transistors. A shield...

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Bibliographic Details
Main Authors Chu Che-Jung, Cheng Shyh-Wei, Chen Hung-Lin
Format Patent
LanguageEnglish
Published 09.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A one-time programmable (OTP) memory cell with floating gate shielding is provided. A pair of transistors is arranged on a semiconductor substrate and electrically coupled in series, where the transistors comprise a floating gate. An interconnect structure overlies the pair of transistors. A shield is arranged in the interconnect structure, directly over the floating gate. The shield is configured to block ions in the interconnect structure from moving to the floating gate. A method for manufacturing an OTP memory cell with floating gate shielding is also provided.
Bibliography:Application Number: US201615008748