Method of decomposing layout of semiconductor device for quadruple patterning technology process and method of manufacturing semiconductor device using the same

A method of decomposing a layout of a semiconductor device for a quadruple patterning technology (QPT) process includes dividing the layout of the semiconductor device into a first temporary pattern, which includes rectangular features having a rectangular shape, and a second temporary pattern, whic...

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Bibliographic Details
Main Authors Kim Dong-Gyun, Kang Dae-Kwon, Yang Jae-Seok, Hwang Sung-Wook, Jung Ji-Young
Format Patent
LanguageEnglish
Published 12.12.2017
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Summary:A method of decomposing a layout of a semiconductor device for a quadruple patterning technology (QPT) process includes dividing the layout of the semiconductor device into a first temporary pattern, which includes rectangular features having a rectangular shape, and a second temporary pattern, which includes cross couple features having a Z-shape, generating a third temporary pattern and a fourth temporary pattern by performing a pattern dividing operation on the first temporary pattern in a first direction, generating a first target pattern and a second target pattern by incorporating each of the cross couple features included in the second temporary pattern into one of the third temporary pattern and the fourth temporary pattern, and generating first through fourth decomposed patterns by performing the pattern dividing operation on the first target pattern and the second target pattern in a second direction.
Bibliography:Application Number: US201514690073