Method of manufacturing solar battery cell

The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of formin...

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Bibliographic Details
Main Authors Tasaka Shogo, Aono Ryota, Kano Yasuyuki, Ishikawa Naoki, Ogino Takayuki, Goda Shinji, Oku Ryosuke, Gonsui Shinobu, Kato Futoshi
Format Patent
LanguageEnglish
Published 05.12.2017
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Summary:The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.
Bibliography:Application Number: US201414766302