Memory device and method of forming the same

Provided is a memory device including a plurality of bit line layers and a plurality of supporting structures. Each bit line layer extends in a plane defined by a first direction and a second direction and has a plurality of bit lines extending along the first direction. Each bit line has a pluralit...

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Bibliographic Details
Main Authors Hong Shih-Ping, Chung Yao-An
Format Patent
LanguageEnglish
Published 21.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a memory device including a plurality of bit line layers and a plurality of supporting structures. Each bit line layer extends in a plane defined by a first direction and a second direction and has a plurality of bit lines extending along the first direction. Each bit line has a plurality of wide parts and a plurality of narrow parts arranged alternately. The supporting structures are disposed between the wide parts of the corresponding bit lines of adjacent bit line layers. Besides, each narrow part of each bit line substantially has an ellipse-like shape in cross section, and each narrow part has a rounding ratio (RR) of greater than about 30%.
Bibliography:Application Number: US201514795689