Device layer transfer with a preserved handle wafer section

• Main Authors: Stamper Anthony K, Jaffe Mark D, Fitzsimmons John A, Farooq Mukta G, Wolf Randy L
• Format: Patent
• Language: English
• Published: 14.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Assemblies including a device layer of a silicon-on-insulator (SOI) substrate and a replacement substrate replacing a handle wafer of the SOI substrate, and methods for transferring the device layer of the SOI substrate from the handle wafer to the replacement substrate. A device structure is formed in a first section of the handle wafer, and a second section of the handle wafer adjoining the first section of the handle wafer is removed to expose a surface of the buried dielectric layer of the silicon-on-insulator substrate. A permanent substrate is attached to the surface of the buried dielectric layer. When the permanent substrate is attached to the surface of the buried dielectric layer, the section of the handle wafer is received inside a cavity defined in the permanent substrate.