Semiconductor memory device

According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first w...

Full description

Saved in:
Bibliographic Details
Main Authors Hatsuda Kosuke, Matsuoka Nao, Hoya Katsuhiko
Format Patent
LanguageEnglish
Published 14.11.2017
Subjects
Online AccessGet full text

Cover

Loading…
Abstract According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first word line, the first memory cell including one end coupled to the first bit line and another end coupled to the first source line; a second transistor including one end coupled to the first bit line; and a third transistor including a gate coupled to the first control line, one end coupled to the first bit line, and another end coupled to the first source line.
AbstractList According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first word line, the first memory cell including one end coupled to the first bit line and another end coupled to the first source line; a second transistor including one end coupled to the first bit line; and a third transistor including a gate coupled to the first control line, one end coupled to the first bit line, and another end coupled to the first source line.
Author Hatsuda Kosuke
Hoya Katsuhiko
Matsuoka Nao
Author_xml – fullname: Hatsuda Kosuke
– fullname: Matsuoka Nao
– fullname: Hoya Katsuhiko
BookMark eNrjYmDJy89L5WSQDk7NzUzOz0spTS7JL1LITc3NL6pUSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBlhaGFiZm5k5GxkQoAQAnSSVQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID US9818467B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US9818467B23
IEDL.DBID EVB
IngestDate Fri Jul 19 16:50:08 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US9818467B23
Notes Application Number: US201615264533
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171114&DB=EPODOC&CC=US&NR=9818467B2
ParticipantIDs epo_espacenet_US9818467B2
PublicationCentury 2000
PublicationDate 20171114
PublicationDateYYYYMMDD 2017-11-14
PublicationDate_xml – month: 11
  year: 2017
  text: 20171114
  day: 14
PublicationDecade 2010
PublicationYear 2017
RelatedCompanies TOSHIBA MEMORY CORPORATION
RelatedCompanies_xml – name: TOSHIBA MEMORY CORPORATION
Score 3.1234167
Snippet According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title Semiconductor memory device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171114&DB=EPODOC&locale=&CC=US&NR=9818467B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1JS8NAFH6Uut40Ktaq5CC5BZN0Mm0OQchGEbpgGumtZJIJ9NCkNBHx3_tmSKsXvb6BWR58b5u3ADyh1V3kI2bpZGhTnaTmQGeWCIdlObVTZjhpLgL6kykdJ-R1aS87sN7Xwsg-oZ-yOSIiKkO8N1Jeb3-CWIHMrayf2RpJ1Uu0cAOt9Y7NIUKXaIHnhvNZMPM133eTWJu-uQ4qJpQJHkrrI2FFizb74bsnilK2vzVKdAHHc9ysbC6hw0sFzvz94DUFTiftf7cCJzJBM6uR2IKwvoJ-LBLaq1J0aq126kbkyn6pOReYvwY1Chf-WMfzVoe3rZL4cLPBDXTR5ee3opBaTvOhnBgFoQPGipTbjpE5FrNGjGY96P25zd0_a304F0wStXQmuYdus_vgD6hUG_Yo2fEN1dR65w
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAba601Iskox0TcxNzXRNEg2NdZOMQMNhySlmpolJBpaJKaABfV8_M49QE68I0wgmhkzYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dG5oDs66JmouTrWuAv4u_s5qzs21osJpfkK0lsGIClglOwNKa1RzYIwQds-8a5gTalFKAXKO4CTKwBQANyysRYmBKzRNm4HSGXbwmzMDhC53vFmZgBy_QTC4GCkIzYbEIg3QwaEF7fh7opNb8IoVc0FrZSoWUVFCeF2VQcHMNcfbQBdoXD_dbfGgw3GXGYgwswC5_qgRoIzX4Nh-zVBODNBMz46SktMRUU0uDZEujJCOLJLNkSQZJnMZI4ZGTZ-D0CPH1iffx9POWZuACBRhoX52hiQwDS0lRaaossIItSZIDBw0AuvR90g
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+memory+device&rft.inventor=Hatsuda+Kosuke&rft.inventor=Matsuoka+Nao&rft.inventor=Hoya+Katsuhiko&rft.date=2017-11-14&rft.externalDBID=B2&rft.externalDocID=US9818467B2