Semiconductor memory device

According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first w...

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Bibliographic Details
Main Authors Hatsuda Kosuke, Matsuoka Nao, Hoya Katsuhiko
Format Patent
LanguageEnglish
Published 14.11.2017
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first word line, the first memory cell including one end coupled to the first bit line and another end coupled to the first source line; a second transistor including one end coupled to the first bit line; and a third transistor including a gate coupled to the first control line, one end coupled to the first bit line, and another end coupled to the first source line.
Bibliography:Application Number: US201615264533