Tungsten gates for non-planar transistors
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, ti...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
07.11.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate. |
---|---|
Bibliography: | Application Number: US201715401965 |