Thru-silicon-via structures

• Main Authors: Graas Carole D, Farooq Mukta G, Chen Fen, Liu Xiao Hu
• Format: Patent
• Language: English
• Published: 07.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further include...