Thru-silicon-via structures

Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further include...

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Bibliographic Details
Main Authors Graas Carole D, Farooq Mukta G, Chen Fen, Liu Xiao Hu
Format Patent
LanguageEnglish
Published 07.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.
Bibliography:Application Number: US201514733445