Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is formed on a substrate, the first interlayer insulating film including a first region corresponding...

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Bibliographic Details
Main Authors Hwang Sung Wook, Oh In Wook, Yang Jae Seok, Lee Jong Hyun, Lee Hyun Jae
Format Patent
LanguageEnglish
Published 07.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is formed on a substrate, the first interlayer insulating film including a first region corresponding to the first conductive pattern region, a second region corresponding to the second conductive pattern region, and a third region spaced apart from the first and second regions and disposed between the first and second regions. First, second and third lower metal wirings are formed to respectively fill the first, second and third recesses of the first interlayer insulating film. A second interlayer insulating film is formed on the first interlayer insulating film. A first dummy via hole is formed in the second interlayer insulating film to expose the third lower metal wiring. The third lower metal wiring is electrically isolated.
Bibliography:Application Number: US201715405762