Integrated circuit structure having thin gate dielectric device and thick gate dielectric device

• Main Authors: Polvino Sean M, Shepard, Jr. Joseph F, Khan Shahrukh A, Siddiqui Shahab, Kwon Unoh
• Format: Patent
• Language: English
• Published: 31.10.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

One aspect of the disclosure relates to and integrated circuit structure and methods of forming the same. The integrated circuit structure may include: a thin gate dielectric device on a substrate, the thin gate dielectric device including: a first interfacial layer over a set of fins within the substrate, wherein the interfacial layer has a thickness of approximately 1.0 nanometers (nm) to approximately 1.2 nm; and a thick gate dielectric device on the substrate adjacent to the thin gate dielectric device, the thick gate dielectric device including: a second interfacial layer over the set of fins within the substrate; and a nitrided oxide layer over the second interfacial layer, wherein the nitrided oxide layer includes a thickness of approximately 3.5 nm to approximately 5.0 nm.