Method of lithography process with inserting scattering bars

The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The...

Full description

Saved in:
Bibliographic Details
Main Authors Ho Irene, Chang Ya Hui, Hsieh Hung-Chang, Hung Ai-Jen, Lu Kuei-Liang
Format Patent
LanguageEnglish
Published 31.10.2017
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.
Bibliography:Application Number: US201514713360