Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode...

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Bibliographic Details
Main Authors Rauf Shahid, Carducci James D, Regelman Olga, Ramaswamy Kartik, Tavassoli Hamid, Collins Kenneth S, Dorf Leonid, Zhang Ying
Format Patent
LanguageEnglish
Published 24.10.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
Bibliography:Application Number: US201615146133