Leak detection using cavity surface quality factor

A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two s...

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Bibliographic Details
Main Author Ehmke John Charles
Format Patent
LanguageEnglish
Published 24.10.2017
Subjects
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TRANSPORTING
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Summary:A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.
Bibliography:Application Number: US201615007698