Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate

• Main Authors: Wada Keiji, Genba Jun, Nishiguchi Taro
• Format: Patent
• Language: English
• Published: 03.10.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR; FLEXIBLE SHEET MATERIAL NOT OTHERWISE PROVIDED FOR; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAUNDERING; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TEXTILES; TREATMENT OF TEXTILES OR THE LIKE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WALL, FLOOR OR LIKE COVERING MATERIALS, e.g. LINOLEUM,OILCLOTH, ARTIFICIAL LEATHER, ROOFING FELT, CONSISTING OF AFIBROUS WEB COATED WITH A LAYER OF MACROMOLECULARMATERIAL

A method for manufacturing a silicon carbide epitaxial substrate includes: a step of placing a silicon carbide single crystal substrate within a chamber and reducing a pressure within the chamber; a step of increasing a temperature within the chamber to a first temperature; a step of introducing hydrogen gas into the chamber and adjusting the pressure within the chamber; a step of introducing hydrocarbon gas into the chamber; a substrate reforming step of increasing the temperature within the chamber to a second temperature and holding the temperature at the second temperature for a predetermined time, with the adjusted pressure within the chamber and a flow rate of the hydrogen gas being maintained and the hydrocarbon gas being introduced; and a step of growing an epitaxial layer on the silicon carbide single crystal substrate by introducing silane gas into the chamber with the second temperature being maintained.