Methods of forming wiring structures including a plurality of metal layers

In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partia...

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Bibliographic Details
Main Authors Lee Nae-In, Kim Jin-Nam, Jung Eun-Ji, Hwang Jae-Won, Cha Jeong-Ok, Hwang Jung-Ha, Lee Jong-Jin, Park Wan-Soo, Kim Rak-Hwan, Kim Byung-Hee, Matsuda Tsukasa, Chang Jae-Won
Format Patent
LanguageEnglish
Published 26.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.
Bibliography:Application Number: US201615000302