Interconnect structures with variable dopant levels

Interconnect structures and related methods of manufacture improve device reliability and performance by selectively incorporating dopants into conductive lines. Multiple seed layer deposition steps or variable trench bottom areas are used to locally control the dopant concentration within the inter...

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Bibliographic Details
Main Authors Filippi Ronald G, Wang Ping-Chuan, Kaltalioglu Erdem, Christiansen Cathryn J
Format Patent
LanguageEnglish
Published 19.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Interconnect structures and related methods of manufacture improve device reliability and performance by selectively incorporating dopants into conductive lines. Multiple seed layer deposition steps or variable trench bottom areas are used to locally control the dopant concentration within the interconnect structures at the same wiring level, which provides a robust integration approach for metallizing interconnects in future-generation technology nodes.
Bibliography:Application Number: US201615203084