Semiconductor device and fabrication method thereof

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate...

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Bibliographic Details
Main Authors Lee Jung Hwan, Chung Yi Sun, Lim Min Gyu
Format Patent
LanguageEnglish
Published 05.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region.
Bibliography:Application Number: US201615008218