Method of fabricating a semiconductor device

A method of fabricating a semiconductor device is disclosed. A substrate is provided. A dummy gate stack is formed on the substrate. The dummy gate stack includes a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer. The amorphous silicon dummy gate is transformed...

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Bibliographic Details
Main Authors Su Po-Wen, Lu Shui-Yen
Format Patent
LanguageEnglish
Published 05.09.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device is disclosed. A substrate is provided. A dummy gate stack is formed on the substrate. The dummy gate stack includes a gate dielectric layer and an amorphous silicon dummy gate on the gate dielectric layer. The amorphous silicon dummy gate is transformed into a nano-crystalline silicon dummy gate. A spacer is formed on a sidewall of the nano-crystalline silicon dummy gate. A source/drain region is formed in the substrate on either side of the dummy gate stack.
Bibliography:Application Number: US201615221611