Electrodes for etch

An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.

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Bibliographic Details
Main Authors Sabharwal Amitabh, Kumar Ajay, Wu Banqiu, Singh Saravjeet
Format Patent
LanguageEnglish
Published 05.09.2017
Subjects
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Summary:An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
Bibliography:Application Number: US201314042490