Method for manufacturing a single-crystal 4H-SiC substrate

• Main Authors: Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
• Format: Patent
• Language: English
• Published: 05.09.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for manufacturing a single-crystal 4H-SiC substrate includes preparing a 4H-SiC bulk single-crystal substrate having a flat surface, and growing an epitaxial first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate to a thickness X, measured in micrometers (μm). The recesses have a diameter Y, measured in micrometers, no smaller than 0.2*X and no larger than 2*X. In addition, the recesses have a depth Z, when measured in micrometers, no smaller than (0.95*X+0.5*10−3), and no larger than 10*X*10−3.