Trench-based power semiconductor devices with increased breakdown voltage characteristics
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
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| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
29.08.2017
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
|---|---|
| AbstractList | Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
| Author | Yedinak Joseph A Challa Ashok |
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| Notes | Application Number: US201514670139 |
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| RelatedCompanies | Fairchild Semiconductor Corporation |
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| Snippet | Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
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