Trench-based power semiconductor devices with increased breakdown voltage characteristics

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

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Bibliographic Details
Main Authors Yedinak Joseph A, Challa Ashok
Format Patent
LanguageEnglish
Published 29.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Bibliography:Application Number: US201514670139