Methods and apparatus for sensing current through power semiconductor devices with reduced sensitivity to temperature and process variations
Current sensing through a power semiconductor device with reduced sensitivity to temperature and process variations. An example arrangement includes a power switch coupled between a voltage input and an output voltage terminal supplying current to a load; a first isolation switch coupled between the...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
22.08.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Current sensing through a power semiconductor device with reduced sensitivity to temperature and process variations. An example arrangement includes a power switch coupled between a voltage input and an output voltage terminal supplying current to a load; a first isolation switch coupled between the voltage input and a first node; a comparator amplifier having a pair of differential inputs coupled to the first node and a second node outputting a voltage in response to the difference at the differential inputs; and a first current source coupled between a positive supply voltage and the first node to output a first current responsive to the voltage output from the comparator amplifier; wherein the first current is proportional to the current through the power switch and a ratio of the on resistance of the power switch and the on resistance of the first isolation switch. Methods and additional arrangements are also disclosed. |
---|---|
Bibliography: | Application Number: US201614994560 |