Plasma dry strip pretreatment to enhance ion implanted resist removal

Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while...

Full description

Saved in:
Bibliographic Details
Main Authors Berry, III Ivan L, Gilchrist Glen
Format Patent
LanguageEnglish
Published 22.08.2017
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light.
AbstractList Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The substrate includes a photoresist layer that has been bombarded with ions. The method includes controlling a temperature of the substrate, while exposing the substrate to the UV light, to a temperature less than or equal to a first temperature. The method includes removing the photoresist layer using plasma while maintaining a temperature of the substrate to less than or equal to a strip process temperature after exposing the substrate to the UV light.
Author Gilchrist Glen
Berry, III Ivan L
Author_xml – fullname: Berry, III Ivan L
– fullname: Gilchrist Glen
BookMark eNqNyj0KwkAQBtAttPDvDnMBIWpAbBMiloJahyH5ggu7s8vOIHh7LTyA1Wve0s0kCRauuwbWyDSWN6kVnykXWAFbhBhZIsiTZQD5JORjDiyGkQrUq32J6cVh7eYTB8Xm58rRubu3ly1y6qGZBwisf9xOx7raVXWzP_xRPtURNRE
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID US9740104B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US9740104B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:10:34 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US9740104B23
Notes Application Number: US201414268455
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170822&DB=EPODOC&CC=US&NR=9740104B2
ParticipantIDs epo_espacenet_US9740104B2
PublicationCentury 2000
PublicationDate 20170822
PublicationDateYYYYMMDD 2017-08-22
PublicationDate_xml – month: 08
  year: 2017
  text: 20170822
  day: 22
PublicationDecade 2010
PublicationYear 2017
RelatedCompanies Lam Research Corporation
RelatedCompanies_xml – name: Lam Research Corporation
Score 3.0943136
Snippet Systems and methods for processing a substrate include exposing a substrate to UV light from a UV light source having a predetermined wavelength range. The...
SourceID epo
SourceType Open Access Repository
SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Title Plasma dry strip pretreatment to enhance ion implanted resist removal
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170822&DB=EPODOC&locale=&CC=US&NR=9740104B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1ba4MwFD6U7vq2uY11N_IwfJNRtdY9yMAbZdBW1jr6VtQkTFhVqmPs3-8kaLeX7SmQSC4nOcl34jlfAO4zBPlsZFDNSBjXTJty7RE_1HSLI_rgqUUlldJ0Zk1i83k1WvUg72JhJE_opyRHRI3KUN8buV9XP5dYvvStrB_SHLPKp3Dp-GprHQ_HgsBc9V0niOb-3FM9z4kX6uwFjSVTWB4u7tZ7AkULmv3g1RVBKdXvEyU8gf0IKyuaU-ixQoEjr3t4TYHDafu_W4ED6aCZ1ZjZKmF9BkGEiHeTELr9IuLVjYoIp8HOYZw0JWHFm5hMgsMg-aZ6F9KjBA1rbAGTTYnL6xxIGCy9iYY9W--ksI4XuzEYF9AvyoJdArE5ZUMzTezEsM2Umrae6VwEKCHuG7PMGMDgz2qu_im7hmMhTnF7qus30G-2H-wWj98mvZOC-wbALIt5
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3JTsMwEB1VZSk3CCDK6gPKLUJN0jQcKqQsVYEuEU1Rb1USOyISWdQEIf6esZUULnCyZEdexh77jTPzDHAbIchnfY0qWsBiRTdprNzjh4pqxIg-4tCggkppOjPGS_1p1V-1IGliYQRP6KcgR0SNilDfK7FfFz-XWI7wrSzvwgSz8oeRP3Tk2jruDTiBuexYQ9ebO3Nbtu3hciHPXtBY0rnlYeFuvTPg5LwcOb1aPCil-H2ijA5h18PKsuoIWiyToGM3D69JsD-t_3dLsCccNKMSM2slLI_B9RDxpgGhmy_CX90oCHcabBzGSZUTlr3xySQ4DJKkxTuXHiVoWGMLmKQ5Lq8TICPXt8cK9my9lcJ6udiOQTuFdpZn7AyIGVPW08PADDRTD6luqpEa8wAlxH0DFmld6P5Zzfk_ZTfQGfvTyXryOHu-gAMuWn6TqqqX0K42H-wKj-IqvBZC_AZuuY5m
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Plasma+dry+strip+pretreatment+to+enhance+ion+implanted+resist+removal&rft.inventor=Berry%2C+III+Ivan+L&rft.inventor=Gilchrist+Glen&rft.date=2017-08-22&rft.externalDBID=B2&rft.externalDocID=US9740104B2