Pure boron for silicide contact
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer in...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
15.08.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2. |
---|---|
Bibliography: | Application Number: US201615248002 |