Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regio...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
08.08.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer. |
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Bibliography: | Application Number: US201514829501 |