Dual work function buried gate type transistor and method for fabricating the same

A transistor may include a source region and a drain region separately formed in a substrate, a trench defined in the substrate between the source region and the drain region, and a buried gate electrode formed. The buried gate electrode includes a high work function liner layer having a bottom port...

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Bibliographic Details
Main Author Oh Tae-Kyung
Format Patent
LanguageEnglish
Published 11.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor may include a source region and a drain region separately formed in a substrate, a trench defined in the substrate between the source region and the drain region, and a buried gate electrode formed. The buried gate electrode includes a high work function liner layer having a bottom portion which is positioned over a bottom of the trench and sidewall portions which are positioned on lower sidewalls of the trench; a low work function liner layer positioned on upper sidewalls of the trench, and overlapping with the source region and the drain region; and a low resistance layer contacting the high work function liner layer and the low work function liner layer, and partially filling the trench.
Bibliography:Application Number: US201414322671