Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers

Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom a...

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Bibliographic Details
Main Authors Glassman Timothy E, Lindert Nick, Baran Andre
Format Patent
LanguageEnglish
Published 27.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.
Bibliography:Application Number: US201113996494