Method for forming semiconductor structure

The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the...

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Bibliographic Details
Main Authors Li Jhen-Cyuan, Wu Yen-Liang, Lu Shui-Yen
Format Patent
LanguageEnglish
Published 20.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the top surface of the fin structure which is not covered by the gate structure is defined as a second top surface. The first top surface is higher than the second top surface, and a spacer covers the sidewalls of the gate structure. The spacer includes an inner spacer and an outer spacer, and the outer pacer further contacts the second top surface of the fin structure directly.
Bibliography:Application Number: US201615247909