Semiconductor device and method of manufacturing the same

According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface o...

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Bibliographic Details
Main Authors Son Nakjin, Kim Daeik, Park Jemin, Kim Jiyoung, Hwang Yoosang
Format Patent
LanguageEnglish
Published 13.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface of the etched portion of the substrate between the grooves is higher than a bottom surface of the groove. A conductive layer is formed to fill the grooves. The conductive layer is etched to form conductive patterns in the grooves, respectively.
Bibliography:Application Number: US201414162859