Method, apparatus, and system for MOL interconnects without titanium liner

Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein th...

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Bibliographic Details
Main Authors Kamineni Vimal, Raymond Mark V, Adusumilli Praneet, Niu Chengyu
Format Patent
LanguageEnglish
Published 13.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.
Bibliography:Application Number: US201514948214