Electroentropic memory device

Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESD...

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Bibliographic Details
Main Authors Gibbs Jaime Hayes, Reynolds Sean William, Andrepont Chase Koby, Hall Sean Claudius, Fulfer Bradford Wesley, Carver David Reginald
Format Patent
LanguageEnglish
Published 13.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
CHEMISTRY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRICITY
INFORMATION STORAGE
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
PHYSICS
STATIC STORES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESDs and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. The memory device may have a stacked architecture with multiple layers of address lines, data lines, and EESDs. The disclosed electroentropic memory devices are operable in ROM and RAM modes. EESDs in the disclosed electroentropic memory devices may include from 2-4096 logic states and/or have a density from 0.001 kb/cm3 to 1024 TB/cm3.
Bibliography:Application Number: US201615343779