Non-volatile memory using bi-directional resistive elements

• Main Author: Baker, Jr. Frank K
• Format: Patent
• Language: English
• Published: 30.05.2017
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory cell includes a first storage node and a second storage node that is complementary to the first storage node. A first bidirectional resistive memory element (BRME) includes a first terminal, a second BRME includes a first terminal. A first access transistor couples the first storage node to a first bit line. A second access transistor couples the second storage node to a second bit line. A third transistor couples the first terminal of the first BRME to the second bit line. A fourth transistor couples the first terminal of the second BRME to the first bit line.